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Q. No.Subtopic: Types of Semiconductors |
88%
Level 1: 80%+
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A \(\mathrm{p\text-n}\) junction diode is said to be forward-biased when:
| 1. | current flows from \(\mathrm{p}\) to \(\mathrm{n}\) |
| 2. | current flows from \(\mathrm{n}\) to \(\mathrm{p}\) |
| 3. | current flows into \(\mathrm{p}\) and current also flow into \(\mathrm{n}\) |
| 4. | electron flow into \(\mathrm{p}\) and electrons flow into \(\mathrm{n}\) |
Subtopic: PN junction |
82%
Level 1: 80%+
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Consider the logic circuit represented in the above diagram. Assume that all the elements used are ideal.
Suppose that the inputs are as follows:
\(A\) = True, \(B\) = False, \(C\) = True
Which, of the following, is correct?
| 1. | \(X_1\) = True | 2. | \(X_2\) = True |
| 3. | \(X\) = False | 4. | none of the above |
Subtopic: Logic gates |
84%
Level 1: 80%+
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An LED is:
| 1. | a \(\mathrm{p}\)-doped silicon that emits light |
| 2. | a \(\mathrm{n}\)-doped silicon that emits light |
| 3. | a \(\mathrm{p \text-n}\) diode that emits light |
| 4. | a transistor that absorbs light |
Subtopic: Applications of PN junction |
84%
Level 1: 80%+
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During the formation p-n junction:
| 1. | holes diffuse from p-side to n-side |
| 2. | electrons diffuse from p-side to n-side |
| 3. | holes diffuse from n-side to p-side |
| 4. | both (2) and (3) |
Subtopic: PN junction |
78%
Level 2: 60%+
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A potential barrier of \(0.3~\text{V}\) exists across a p-n junction. If depletion region is \(1~ \mu \text{m}\) wide, then the intensity of
electric field in this region is:
1. \(2 \times 10^5 ~\text {V/m}\)
2. \(3 \times 10^5 ~\text {V/m}\)
3. \(4 \times 10^5 ~\text {V/m}\)
4. \(5 \times 10^5 ~\text {V/m}\)
electric field in this region is:
1. \(2 \times 10^5 ~\text {V/m}\)
2. \(3 \times 10^5 ~\text {V/m}\)
3. \(4 \times 10^5 ~\text {V/m}\)
4. \(5 \times 10^5 ~\text {V/m}\)
Subtopic: PN junction |
93%
Level 1: 80%+
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What happens to the width of the depletion layer of p-n junction in forward biasing?
| 1. | it increases. |
| 2. | it decreases. |
| 3. | it remains fixed. |
| 4. | may increase or decrease. |
Subtopic: PN junction |
90%
Level 1: 80%+
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Choose the correct statement among the following:
| 1. | The current under reverse bias is almost voltage independent upto critical reverse bias voltage. |
| 2. | For diode in reverse bias, the potential barrier increases. |
| 3. | For diode in forward bias, the potential barrier reduces. |
| 4. | All of these |
Subtopic: PN junction |
90%
Level 1: 80%+
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In case of \(p-n\) junction diode, at a high value of reverse bias voltage the current rises sharply. The value of this reverse voltage is known as:
| 1. | cut-in-voltage |
| 2. | break down voltage |
| 3. | cut-off voltage |
| 4. | inverse voltage |
Subtopic: PN junction |
88%
Level 1: 80%+
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A Zener diode is specified having a breakdown voltage of \(8.1~\text{V}\) with a maximum power dissipation of \(346~\text{mW}\). The maximum current that diode can handle is:
1. \(34~\text{mA}\)
2. \(42.7~\text{mA}\)
3. \(36.2~\text{mA}\)
4. \(52.6~\text{mA}\)
1. \(34~\text{mA}\)
2. \(42.7~\text{mA}\)
3. \(36.2~\text{mA}\)
4. \(52.6~\text{mA}\)
Subtopic: Applications of PN junction |
90%
Level 1: 80%+
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