To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is
(1) Monovalent
(2) Divalent
(3) Trivalent
(4) Pentavalent
Which is the correct relation for the forbidden energy gap in the conductor, semiconductor, and insulator
(1)
(2)
(3)
(4)
In a P-type semiconductor, germanium is doped with
(1) Boron
(2) Gallium
(3) Aluminium
(4) All of these
In a P-type semiconductor
(1) Current is mainly carried by holes
(2) Current is mainly carried by electrons
(3) The material is always positively charged
(4) Doping is done by pentavalent material
If and are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then
(1) >>
(2) <<
(3)
(4) =
At room temperature, a P-type semiconductor has
(1) Large number of holes and few electrons
(2) Large number of free electrons and few holes
(3) Equal number of free electrons and holes
(4) No electrons or holes
GaAs is
(1) Element semiconductor
(2) Alloy semiconductor
(3) Bad conductor
(4) Metallic semiconductor
For germanium crystal, the forbidden energy gap in joules is
(1)
(2)
(3)
(4) Zero
At ordinary temperatures, the electrical conductivity of semi conductors in mho/meter is in the range
(1) to
(2) to
(3) to
(4) to
A pure semiconductor behaves slightly as a conductor at
(1) Room temperature
(2) Low temperature
(3) High temperature
(4) Both (b) and (c)